生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-XUFM-X35 |
Reach Compliance Code: | unknown | 风险等级: | 5.61 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 105 A | 集电极-发射极最大电压: | 1200 V |
配置: | COMPLEX | JESD-30 代码: | R-XUFM-X35 |
元件数量: | 5 | 端子数量: | 35 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 610 ns | 标称接通时间 (ton): | 330 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT75X120RTP3G | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, M | |
APTGT75X120TE3 | ADPOW |
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3 Phase bridge Trench IGBT Power Module | |
APTGT75X60T3G | MICROSEMI |
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3 Phase bridge Trench + Field Stop IGBT® Powe | |
APTGT75X60T3G-Module | MICROCHIP |
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Configuration: Three Phase bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silicon | |
APTGTQ100A65T1G-Module | MICROCHIP |
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High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea | |
APTGTQ100DA65T1G-Module | MICROCHIP |
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High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea | |
APTGTQ100DDA65T3G-Module | MICROCHIP |
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High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea | |
APTGTQ100H65T3G-Module | MICROCHIP |
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High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea | |
APTGTQ100SK65T1G-Module | MICROCHIP |
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High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea | |
APTGTQ150TA65TPG-Module | MICROCHIP |
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High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea |