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APTGT75X120E3 PDF预览

APTGT75X120E3

更新时间: 2024-11-05 20:32:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网电动机控制晶体管
页数 文件大小 规格书
3页 225K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33

APTGT75X120E3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X33针数:33
Reach Compliance Code:compliant风险等级:5.04
外壳连接:ISOLATED最大集电极电流 (IC):100 A
集电极-发射极最大电压:1200 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X33JESD-609代码:e0
元件数量:6端子数量:33
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):610 ns标称接通时间 (ton):330 ns
Base Number Matches:1

APTGT75X120E3 数据手册

 浏览型号APTGT75X120E3的Datasheet PDF文件第2页浏览型号APTGT75X120E3的Datasheet PDF文件第3页 
APTGT75X120E3  
VCES = 1200V  
IC = 75A @ Tc = 80°C  
3 Phase bridge  
Trench IGBT® Power Module  
Application  
Features  
AC Motor control  
Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
19  
17  
15  
Benefits  
Stable temperature behavior  
Very rugged  
20  
21  
14  
13  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
1
2
3
4
5
6
7
8
9
10  
11 12  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
100  
75  
175  
±20  
350  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Operating Area  
150A@1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 3  
APT website – http://www.advancedpower.com  

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