Datasheet > APTGT75TL60T3G-Module

APTGT75TL60T3G-Module

更新时间： 2024-11-06 14:54:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
8页	331K
描述
Configuration: Three level inverterVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silicon type: TRENCH 3 IGBT Package: SP3F

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APTGT75TL60T3G

Three level inverter

Trench + Field Stop IGBT3

Power Module

V_CES= 600V

I_C= 75A @ Tc = 80°C

Application



Solar converter

Uninterruptible Power Supplies

Features



Trench + Field Stop IGBT3

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Low leakage current

RBSOA and SCSOA rated



Kelvin emitter for easy drive

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Low profile

RoHS Compliant

All multiple inputs and outputs must be shorted together

Example: 10/11/12 ; 7/8 …

All ratings @ T_j= 25°C unless otherwise specified

Q1 to Q4 Absolute maximum ratings (per IGBT)

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Voltage

Continuous Collector Current

600

100

140

±20

250

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

T_C= 25°C

T_J= 150°C

RBSOA Reverse Bias Safe Operating Area

150A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 8

www.microsemi.com

12 3 4 5 6 7 8

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