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APTGT75X120RTP3G PDF预览

APTGT75X120RTP3G

更新时间: 2024-11-05 21:22:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网电动机控制晶体管
页数 文件大小 规格书
6页 287K
描述
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-35

APTGT75X120RTP3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X35针数:35
Reach Compliance Code:compliant风险等级:5.04
外壳连接:ISOLATED最大集电极电流 (IC):105 A
集电极-发射极最大电压:1200 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X35
JESD-609代码:e1湿度敏感等级:1
元件数量:7端子数量:35
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):610 ns标称接通时间 (ton):330 ns
VCEsat-Max:2.1 VBase Number Matches:1

APTGT75X120RTP3G 数据手册

 浏览型号APTGT75X120RTP3G的Datasheet PDF文件第2页浏览型号APTGT75X120RTP3G的Datasheet PDF文件第3页浏览型号APTGT75X120RTP3G的Datasheet PDF文件第4页浏览型号APTGT75X120RTP3G的Datasheet PDF文件第5页浏览型号APTGT75X120RTP3G的Datasheet PDF文件第6页 
APTGT75X120RTP3G  
APTGT75X120BTP3G  
Input rectifier bridge + Brake + 3 Phase Bridge  
Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 75A @ Tc = 80°C  
Application  
21  
CR10 CR12 CR14  
Features  
AC Motor control  
1
2
3
CR11 CR13 CR15  
Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
23  
Low tail current  
22  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
9
20  
19  
18  
17  
16  
15  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
CR7  
7
Low leakage current  
4
5
6
R
8
Avalanche energy rated  
RBSOA and SCSOA rated  
14  
13  
12  
11  
Q7  
Kelvin emitter for easy drive  
Very low stray inductance  
24  
10  
High level of integration  
APTGT75X120RTP3G: Without Brake (Pin 7 & 14 not connected)  
Internal thermistor for temperature monitoring  
21  
20 19  
18 17  
16 15  
14 13 12 11 10  
Benefits  
Low conduction losses  
22  
23  
24  
Stable temperature behavior  
Very rugged  
9
8
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
7
1
2
3
4
5
6
RoHS Compliant  
All ratings @ Tj = 25°C unless otherwise specified  
1. Absolute maximum ratings  
Diode rectifier Absolute maximum ratings  
Symbol  
VRRM  
IF  
Parameter  
Max ratings  
Unit  
V
Repetitive Peak Reverse Voltage  
DC Forward Current  
1600  
80  
500  
400  
TC = 80°C  
Tj = 25°C  
Tj = 150°C  
A
IFSM  
Surge Forward Current  
tp = 10ms  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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