是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X21 |
针数: | 21 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
其他特性: | AVALANCHE RATED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 600 V |
配置: | 3 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-XUFM-X21 |
JESD-609代码: | e1 | 湿度敏感等级: | 1 |
元件数量: | 6 | 端子数量: | 21 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 310 ns | 标称接通时间 (ton): | 170 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT75TDU60PG-Module | MICROCHIP |
获取价格 |
Configuration: Triple Dual common sourceVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75 | |
APTGT75TL60T3G | MICROSEMI |
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Three level inverter Trench + Field Stop IGBT Power Module | |
APTGT75TL60T3G-Module | MICROCHIP |
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Configuration: Three level inverterVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silic | |
APTGT75X120BTP3 | ADPOW |
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Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module | |
APTGT75X120BTP3G | MICROSEMI |
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Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MO | |
APTGT75X120E3 | ADPOW |
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3 Phase bridge Trench IGBT Power Module | |
APTGT75X120E3 | MICROSEMI |
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Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
APTGT75X120E3G | MICROSEMI |
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Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
APTGT75X120RTP3 | ADPOW |
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Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module | |
APTGT75X120RTP3G | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, M |