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APTGT75TDU60PG PDF预览

APTGT75TDU60PG

更新时间: 2024-11-24 03:28:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
5页 258K
描述
Triple Dual Common Source Trench + Field Stop IGBT Power Module

APTGT75TDU60PG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X21
针数:21Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
其他特性:AVALANCHE RATED外壳连接:ISOLATED
最大集电极电流 (IC):100 A集电极-发射极最大电压:600 V
配置:3 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X21
JESD-609代码:e1湿度敏感等级:1
元件数量:6端子数量:21
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):310 ns标称接通时间 (ton):170 ns
Base Number Matches:1

APTGT75TDU60PG 数据手册

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APTGT100DU120TG  
Dual common source  
Fast Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 100A @ Tc = 80°C  
Application  
C1  
C2  
AC Switches  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Q1  
Q2  
G1  
E1  
G2  
E2  
Features  
Fast Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
E
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
NTC1  
NTC2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
Benefits  
G2  
C2  
C2  
E2  
Stable temperature behavior  
Very rugged  
C1  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
E
E1  
G1  
E2  
G2  
NTC2  
NTC1  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
140  
100  
200  
±20  
480  
V
TC = 25°C  
IC  
Continuous Collector Current  
A
TC = 80°C  
TC = 25°C  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 200A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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