是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-264MA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 1.45 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 94 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 30 V | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 379 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 465 ns |
标称接通时间 (ton): | 46 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT35GN120S | MICROSEMI |
获取价格 |
Utilizing the latest Non-Punch Through (NPT) Field Stop technology | |
APT35GN120SG | MICROSEMI |
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Utilizing the latest Non-Punch Through (NPT) Field Stop technology | |
APT35GP120B | ADPOW |
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POWER MOS 7 IGBT | |
APT35GP120B2D2 | ETC |
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Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps|Ultrafast IGBT Family | |
APT35GP120B2DF2 | MICROSEMI |
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Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel | |
APT35GP120B2DF2 | ADPOW |
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Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3 | |
APT35GP120B2DQ2 | ADPOW |
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POWER MOS 7 IGBT | |
APT35GP120B2DQ2G | MICROSEMI |
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Power Semiconductors Power Modules | |
APT35GP120B2DQ2G | ADPOW |
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POWER MOS 7 IGBT | |
APT35GP120BG | MICROSEMI |
获取价格 |
Power Semiconductors Power Modules |