Datasheet > APT35GT120JU2-Module

APT35GT120JU2-Module

更新时间： 2024-10-29 14:54:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
8页	565K
描述
Configuration: Boost chopperVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 35Silicon type: TRENCH 3 IGBT Package: SOT227

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APT35GT120JU2-Module 数据手册

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APT35GT120JU2

ISOTOP^®Boost chopper

Trench + Field Stop IGBT3

V_CES= 1200V

I_C= 35A @ Tc = 80°C

Application



AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Brake switch

Features



Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated



ISOTOP^®Package (SOT-227)

Very low stray inductance

High level of integration

Benefits



Low conduction losses

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

ISOTOP^

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

I_C1

I_C2

I_CM

V_GE

P_D

Collector - Emitter Breakdown Voltage

1200

±20

260

T_C= 25°C

T_C= 80°C

T_C= 25°C

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

IF_AV

Maximum Average Forward Current

Duty cycle=0.5 T_C= 80°C

IF_RMS

RMS Forward Current (Square wave, 50% duty)

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 8

www.microsemi.com

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