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APT36GA60SD15 PDF预览

APT36GA60SD15

更新时间： 2024-10-28 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率控制瞄准线双极性晶体管栅
页数 文件大小 规格书
9页 242K
描述
High Speed PT IGBT

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中文翻译

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APT36GA60SD15 技术参数

是否Rohs认证：符合生命周期：Active
零件包装代码：D2PAK包装说明：ROHS COMPLIANT, D3PAK-3
针数：3Reach Compliance Code：compliant
风险等级：5.64Is Samacsys：N
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：65 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值：6 V
门极-发射极最大电压：30 VJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：290 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：262 ns
标称接通时间 (ton)：29 nsBase Number Matches：1

APT36GA60SD15 数据手册

 浏览型号APT36GA60SD15的Datasheet PDF文件第2页浏览型号APT36GA60SD15的Datasheet PDF文件第3页浏览型号APT36GA60SD15的Datasheet PDF文件第4页浏览型号APT36GA60SD15的Datasheet PDF文件第5页浏览型号APT36GA60SD15的Datasheet PDF文件第6页浏览型号APT36GA60SD15的Datasheet PDF文件第7页 
APT36GA60BD15  
APT36GA60SD15  
600V  
High Speed PT IGBT  
APT36GA60SD15  
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is  
achieved through leading technology silicon design and lifetime control processes. A  
reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT  
technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excel-  
lent noise immunity, short delay times and simple gate drive. The intrinsic chip gate  
resistance and capacitance of the poly-silicone gate structure help control di/dt during  
switching, resulting in low EMI, even when switching at high frequency.  
D3PAK  
APT36GA60BD15  
Combi (IGBT and Diode)  
FEATURES  
TYPICAL APPLICATIONS  
• Fast switching with low EMI  
• Very Low Eoff for maximum efficiency  
• Ultra low Cres for improved noise immunity  
• Low conduction loss  
• ZVS phase shifted and other full bridge  
• Half bridge  
• High power PFC boost  
• Welding  
• Low gate charge  
• UPS, solar, and other inverters  
• High frequency, high efficiency industrial  
• Increased intrinsic gate resistance for low EMI  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Ratings  
Unit  
Collector Emitter Voltage  
600  
V
Vces  
IC1  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 100°C  
Pulsed Collector Current 1  
65  
36  
A
IC2  
ICM  
109  
VGE  
Gate-Emitter Voltage 2  
±30  
V
PD  
Total Power Dissipation @ TC = 25°C  
Switching Safe Operating Area @ TJ = 150°C  
Operating and Storage Junction Temperature Range  
290  
W
SSOA  
TJ, TSTG  
TL  
109A @ 600V  
-55 to 150  
°C  
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds  
300  
Static Characteristics  
Symbol Parameter  
T = 25°C unless otherwise specified  
J
Test Conditions  
Min  
Typ  
Max  
Unit  
VBR(CES)  
Collector-Emitter Breakdown Voltage  
VGE = 0V, IC = 1.0mA  
600  
TJ = 25°C  
TJ = 125°C  
2.0  
1.9  
4.5  
2.5  
VGE = 15V,  
IC = 20A  
V
VCE(on)  
VGE(th)  
ICES  
Collector-Emitter On Voltage  
Gate Emitter Threshold Voltage  
Zero Gate Voltage Collector Current  
Gate-Emitter Leakage Current  
VGE =VCE , IC = 1mA  
3
6
TJ = 25°C  
275  
VCE = 600V,  
VGE = 0V  
μA  
TJ = 125°C  
3000  
±100  
IGES  
VGS = ±30V  
nA  
Microsemi Website - http://www.microsemi.com  
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中文翻译

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