Datasheet > APT36GA60BD15

APT36GA60BD15

更新时间： 2024-10-28 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
9页	242K
描述
High Speed PT IGBT

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中文翻译

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数据手册

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APT36GA60BD15 数据手册

APT36GA60BD15

APT36GA60SD15

600V

High Speed PT IGBT

APT36GA60SD15

POWER MOS 8^®is a high speed Punch-Through switch-mode IGBT. Low E_offis

achieved through leading technology silicon design and lifetime control processes. A

reduced E_off- V_CE(ON)tradeoff results in superior efﬁciency compared to other IGBT

technologies. Low gate charge and a greatly reduced ratio of C_res/C_iesprovide excel-

lent noise immunity, short delay times and simple gate drive. The intrinsic chip gate

resistance and capacitance of the poly-silicone gate structure help control di/dt during

switching, resulting in low EMI, even when switching at high frequency.

D³PAK

APT36GA60BD15

Combi (IGBT and Diode)

FEATURES

TYPICAL APPLICATIONS

• Fast switching with low EMI

• Very Low E_offfor maximum efﬁciency

• Ultra low C_resfor improved noise immunity

• Low conduction loss

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• Low gate charge

• UPS, solar, and other inverters

• High frequency, high efﬁciency industrial

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Ratings

Unit

Collector Emitter Voltage

600

V_ces

I_C1

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 100°C

Pulsed Collector Current ¹

I_C2

I_CM

109

V_GE

Gate-Emitter Voltage ²

±30

P_D

Total Power Dissipation @ T_C= 25°C

Switching Safe Operating Area @ T_J= 150°C

Operating and Storage Junction Temperature Range

290

SSOA

T_J, T_STG

T_L

109A @ 600V

-55 to 150

°C

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds

300

Static Characteristics

Symbol Parameter

T = 25°C unless otherwise speciﬁed

Test Conditions

Min

Typ

Max

Unit

V_BR(CES)

Collector-Emitter Breakdown Voltage

V_GE= 0V, I_C= 1.0mA

600

T_J= 25°C

T_J= 125°C

2.0

1.9

4.5

2.5

V_GE= 15V,

I_C= 20A

V_CE(on)

V_GE(th)

I_CES

Collector-Emitter On Voltage

Gate Emitter Threshold Voltage

Zero Gate Voltage Collector Current

Gate-Emitter Leakage Current

V_GE=V_CE, I_C= 1mA

T_J= 25°C

275

V_CE= 600V,

V_GE= 0V

μA

T_J= 125°C

3000

±100

I_GES

V_GS= ±30V

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7...9

中文翻译

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