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APT36N90BC3G PDF预览

APT36N90BC3G

更新时间: 2024-11-16 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 138K
描述
Super Junction MOSFET

APT36N90BC3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.59
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1940 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (ID):36 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):96 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

APT36N90BC3G 数据手册

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900V  
36A  
APT36N90BC3G*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
COOLMOS  
Power Semiconductors  
Super Junction MOSFET  
D3  
• Ultra Low RDS(ON)  
• Low Miller Capacitance  
• Ultra Low Gate Charge, Q  
• Avalanche Energy Rated  
g
D
S
dv  
• Extreme  
/
Rated  
dt  
• Dual die (parallel)  
G
• Popular T-MAX Package  
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with  
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.  
MAXIMUM RATINGS  
All Ratings per die: T = 25°C unless otherwise specified.  
C
APT36N90BC3G  
UNIT  
Symbol  
Parameter  
VDSS  
900  
36  
Volts  
Drain-Source Voltage  
Continuous Drain Current @ TC = 25°C  
Continuous Drain Current @ TC = 100°C  
ID  
Amps  
23  
1
IDM  
96  
Pulsed Drain Current  
VGS  
Volts  
20  
Gate-Source Voltage Continuous  
Total Power Dissipation @ TC = 25°C  
390  
Watts  
PD  
TJ,TSTG  
TL  
-55 to 150  
260  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063" from Case for 10 Sec.  
°C  
dv  
/
50  
Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125°C)  
V/ns  
dt  
2
IAR  
EAR  
EAS  
8.8  
Amps  
Avalanche Current  
2
( Id = 8.8A, Vdd = 50V )  
( Id = 8.8A, Vdd = 50V )  
2.9  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
mJ  
1940  
STATIC ELECTRICAL CHARACTERISTICS  
Characteristic / Test Conditions  
Symbol  
BV(DSS)  
RDS(on)  
MIN  
TYP  
MAX  
UNIT  
Volts  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
900  
3
Drain-Source On-State Resistance  
(VGS = 10V, ID = 18A)  
0.10  
0.12  
100  
-
Ohms  
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150°C)  
Gate-Source Leakage Current (VGS = 20V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)  
-
-
-
50  
-
IDSS  
µA  
IGSS  
-
100  
3.5  
nA  
VGS(th)  
2.5  
3
Volts  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-  
mark of Infineon Technologies AG."  
Microsemi Website - http://www.microsemi.com  

APT36N90BC3G 替代型号

型号 品牌 替代类型 描述 数据表
IPW90R120C3 INFINEON

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