Datasheet > APT36N90BC3G_10

APT36N90BC3G_10

更新时间： 2024-10-28 08:33:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	135K
描述
Super Junction MOSFET

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中文翻译

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数据手册

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APT36N90BC3G_10 数据手册

900V

36A

APT36N90BC3G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

COOLMOS

Power Semiconductors

Super Junction MOSFET

D³

• Ultra Low R_DS(ON)

• Low Miller Capacitance

• Ultra Low Gate Charge, Q

• Avalanche Energy Rated

• Extreme

Rated

• Dual die (parallel)

• Popular T-MAX Package

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

MAXIMUM RATINGS

All Ratings per die: T = 25°C unless otherwise speciﬁed.

APT36N90BC3G

UNIT

Symbol

Parameter

V_DSS

900

Volts

Drain-Source Voltage

Continuous Drain Current @ T_C= 25°C

Continuous Drain Current @ T_C= 100°C

I_D

Amps

I_DM

Pulsed Drain Current

V_GS

Volts

±20

390

Gate-Source Voltage Continuous

Total Power Dissipation @ T_C= 25°C

Watts

P_D

T_J,T_STG

T_L

-55 to 150

260

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

°C

Drain-Source Voltage slope (V_DS= 400V, I_D= 36A, T_J= 125°C)

V/ns

I_AR

E_AR

E_AS

8.8

Avalanche Current

Amps

( Id = 8.8A, Vdd = 50V )

2.9

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1940

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Symbol

BV_(DSS)

R_DS(on)

MIN

TYP

MAX

UNIT

Volts

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250μA)

900

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 18A)

0.10

0.12

100

Ohms

Zero Gate Voltage Drain Current (V_DS= 900V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 900V, V_GS= 0V, T_C= 150°C)

Gate-Source Leakage Current (V_GS= ±20V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.9mA)

I_DSS

μA

I_GSS

100

3.5

V_GS(th)

2.5

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOS™ comprise a new family of transistors developed by Inﬁneon Technologies AG. "COOLMOS" is a trade-

mark of Inﬁneon Technologies AG."

Microsemi Website - http://www.microsemi.com

12 3 4 5

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