APT38F50J
500V,ꢀ38A,ꢀ0.10ΩꢀMax,ꢀt ≤280ns
rr
N-ChannelꢀFREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
S
S
7
2
2
D
-
G
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
T
O
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
rr
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
S
"UL Recognized"
file # E145592
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
rss iss
ISOTOP®
APT38F50J
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
S
Single die FREDFET
G
FEATURES
TYPICAL APPLICATIONS
•ꢀ ZVSꢀphaseꢀshiftedꢀandꢀotherꢀfullꢀbridge
•ꢀꢀFastꢀswitchingꢀwithꢀlowꢀEMI
•ꢀꢀHalfꢀbridge
ꢀ •ꢀꢀLowꢀt ꢀforꢀhighꢀreliability
rr
•ꢀꢀPFCꢀandꢀotherꢀboostꢀconverter
•ꢀ Buckꢀconverter
ꢀ •ꢀꢀUltraꢀlowꢀC ꢀforꢀimprovedꢀnoiseꢀimmunity
rss
ꢀ •ꢀꢀLowꢀgateꢀcharge
ꢀ •ꢀꢀAvalancheꢀenergyꢀrated
•ꢀꢀRoHSꢀcompliant
•ꢀꢀSingleꢀandꢀtwoꢀswitchꢀforward
•ꢀꢀFlyback
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
38
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 1ꢀꢀ°C
24
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
175
3ꢀ
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
12ꢀꢀ
28
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
355
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
Junction to Case Thermal Resistance
ꢀ.35
°C/W
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
ꢀ.15
TJ,TSTG
VIsolation
°C
V
-55
15ꢀ
RMS Voltage (5ꢀ-6ꢀhHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
25ꢀꢀ
oz
g
1.ꢀ3
29.2
WT
Package Weight
in·lbf
N·m
1ꢀ
Torque
Terminals and Mounting Screws.
1.1
MicrosemiWebsite-http://www.microsemi.com