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APT38F50J_09 PDF预览

APT38F50J_09

更新时间: 2024-10-28 08:33:23
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 301K
描述
N-Channel FREDFET

APT38F50J_09 数据手册

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APT38F50J  
500V,ꢀ38A,ꢀ0.10ꢀMax,ꢀt 280ns  
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N-ChannelꢀFREDFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
S
S
7
2
2
D
-
G
This 'FREDFET' version has a drain-source (body) diode that has been optimized for  
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high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft  
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recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly  
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"UL Recognized"  
file # E145592  
reduced ratio of C /C result in excellent noise immunity and low switching loss. The  
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ISOTOP®  
APT38F50J  
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control  
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching  
at very high frequency.  
D
S
Single die FREDFET  
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FEATURES  
TYPICAL APPLICATIONS  
•ꢀ ZVSꢀphaseꢀshiftedꢀandꢀotherꢀfullꢀbridge  
•ꢀꢀFastꢀswitchingꢀwithꢀlowꢀEMI  
•ꢀꢀHalfꢀbridge  
ꢀ •ꢀꢀLowꢀt ꢀforꢀhighꢀreliability  
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•ꢀꢀPFCꢀandꢀotherꢀboostꢀconverter  
•ꢀ Buckꢀconverter  
ꢀ •ꢀꢀUltraꢀlowꢀC ꢀforꢀimprovedꢀnoiseꢀimmunity  
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ꢀ •ꢀꢀLowꢀgateꢀcharge  
ꢀ •ꢀꢀAvalancheꢀenergyꢀrated  
•ꢀꢀRoHSꢀcompliant  
•ꢀꢀSingleꢀandꢀtwoꢀswitchꢀforward  
•ꢀꢀFlyback  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
38  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 1ꢀꢀ°C  
24  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
175  
3ꢀ  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
12ꢀꢀ  
28  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
355  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
ꢀ.35  
°C/W  
RθCS  
Case to Sink Thermal Resistance, Flat, Greased Surface  
Operating and Storage Junction Temperature Range  
ꢀ.15  
TJ,TSTG  
VIsolation  
°C  
V
-55  
15ꢀ  
RMS Voltage (5ꢀ-6ꢀhHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)  
25ꢀꢀ  
oz  
g
1.ꢀ3  
29.2  
WT  
Package Weight  
in·lbf  
N·m  
1ꢀ  
Torque  
Terminals and Mounting Screws.  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

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