5秒后页面跳转
APT38M50J_09 PDF预览

APT38M50J_09

更新时间: 2024-10-28 08:33:23
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 121K
描述
N-Channel MOSFET

APT38M50J_09 数据手册

 浏览型号APT38M50J_09的Datasheet PDF文件第2页浏览型号APT38M50J_09的Datasheet PDF文件第3页浏览型号APT38M50J_09的Datasheet PDF文件第4页 
APT38M50J  
500V, 38A, 0.10Ω Max  
N-Channel MOSFET  
S
S
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
A proprietary planar stripe design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in flyback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
7
2
D
-2  
G
T
O
S
"UL Recognized"  
file # E145592  
ISOTOP®  
D
S
APT38M50J  
Single die MOSFET  
G
FEATURES  
TYPICAL APPLICATIONS  
• PFC and other boost converter  
• Fast switching with low EMI/RFI  
• Buck converter  
• Low RDS(on)  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra low Crss for improved noise immunity  
• Low gate charge  
• Avalanche energy rated  
• RoHS compliant  
• Inverters  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
38  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 1ꢀꢀ°C  
24  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
175  
3ꢀ  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
12ꢀꢀ  
28  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
357  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
ꢀ.35  
°C/W  
RθCS  
Case to Sink Thermal Resistance, Flat, Greased Surface  
Operating and Storage Junction Temperature Range  
RMS Voltage (5ꢀ-6ꢀhHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)  
ꢀ.15  
TJ,TSTG  
VIsolation  
°C  
V
-55  
15ꢀ  
25ꢀꢀ  
oz  
g
1.ꢀ3  
29.2  
WT  
Package Weight  
in·lbf  
N·m  
1ꢀ  
Torque  
Terminals and Mounting Screws.  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

与APT38M50J_09相关器件

型号 品牌 获取价格 描述 数据表
APT38N60BC6 MICROSEMI

获取价格

C Super Junction MOSFET
APT38N60SC6 MICROSEMI

获取价格

C Super Junction MOSFET
APT39F60J MICROSEMI

获取价格

N-Channel FREDFET
APT39M60J MICROSEMI

获取价格

N-Channel MOSFET
APT39M60J_09 MICROSEMI

获取价格

N-Channel MOSFET
APT4007DN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 60A I(D) | CHIP
APT4007FN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 60A I(D) | SIP-TAB
APT4008EN ADPOW

获取价格

Transistor
APT4009EN ADPOW

获取价格

Transistor
APT40-101DN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | CHIP