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APT36GA60S

更新时间： 2024-10-28 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率控制瞄准线双极性晶体管栅
页数 文件大小 规格书
6页 213K
描述
High Speed PT IGBT

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中文翻译

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APT36GA60S 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：ROHS COMPLIANT, D3PAK-3针数：3
Reach Compliance Code：compliant风险等级：5.64
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：65 A
集电极-发射极最大电压：600 V配置：SINGLE
门极发射器阈值电压最大值：6 V门极-发射极最大电压：30 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：245极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：290 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：PURE MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：262 ns标称接通时间 (ton)：29 ns
Base Number Matches：1

APT36GA60S 数据手册

 浏览型号APT36GA60S的Datasheet PDF文件第2页浏览型号APT36GA60S的Datasheet PDF文件第3页浏览型号APT36GA60S的Datasheet PDF文件第4页浏览型号APT36GA60S的Datasheet PDF文件第5页浏览型号APT36GA60S的Datasheet PDF文件第6页 
APT36GA60B  
APT36GA60S  
600V  
High Speed PT IGBT  
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved  
APT36GA60S  
D3PAK  
through leading technology silicon design and lifetime control processes. A reduced Eoff  
-
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low  
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short  
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the  
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even  
when switching at high frequency.  
APT36GA60B  
Single die IGBT  
FEATURES  
TYPICAL APPLICATIONS  
• Fast switching with low EMI  
• Very Low Eoff for maximum efficiency  
• Ultra low Cres for improved noise immunity  
• Low conduction loss  
• ZVS phase shifted and other full bridge  
• Half bridge  
• High power PFC boost  
• Welding  
• Low gate charge  
• UPS, solar, and other inverters  
• High frequency, high efficiency industrial  
• Increased intrinsic gate resistance for low EMI  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Ratings  
Unit  
Collector Emitter Voltage  
600  
V
Vces  
IC1  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 100°C  
Pulsed Collector Current 1  
65  
36  
A
IC2  
ICM  
109  
VGE  
Gate-Emitter Voltage 2  
±30  
V
PD  
Total Power Dissipation @ TC = 25°C  
Switching Safe Operating Area @ TJ = 150°C  
Operating and Storage Junction Temperature Range  
290  
W
SSOA  
TJ, TSTG  
TL  
109A @ 600V  
-55 to 150  
°C  
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds  
300  
Static Characteristics  
Symbol Parameter  
T = 25°C unless otherwise specified  
J
Test Conditions  
Min  
Typ  
Max  
Unit  
VBR(CES)  
Collector-Emitter Breakdown Voltage  
VGE = 0V, IC = 1.0mA  
600  
TJ = 25°C  
TJ = 125°C  
VGE =VCE , IC = 1mA  
2.0  
1.9  
4.5  
2.5  
V
GE = 15V,  
V
VCE(on)  
VGE(th)  
ICES  
Collector-Emitter On Voltage  
IC = 20A  
Gate Emitter Threshold Voltage  
Zero Gate Voltage Collector Current  
Gate-Emitter Leakage Current  
3
6
TJ = 25°C  
250  
VCE = 600V,  
VGE = 0V  
VGS = ±30V  
μA  
TJ = 125°C  
2500  
±100  
IGES  
nA  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
-
Max  
0.43  
-
Unit  
°C/W  
g
RθJC  
WT  
Junction to Case Thermal Resistance  
Package Weight  
-
-
5.9  
Torque  
Mounting Torque (TO-247 Package), 4-40 or M3 screw  
in·lbf  
10  
Microsemi Website - http://www.microsemi.com  
123456

中文翻译

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