Datasheet > 晶体管 > IGBT> APT35GN120SG

APT35GN120SG

更新时间： 2024-10-28 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	143K
描述
Utilizing the latest Non-Punch Through (NPT) Field Stop technology

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技术参数
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APT35GN120SG 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.72
最大集电极电流 (IC)：	94 A	集电极-发射极最大电压：	1200 V
门极发射器阈值电压最大值：	6.5 V	门极-发射极最大电压：	30 V
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	379 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	Base Number Matches：	1

APT35GN120SG 数据手册

TYPICAL PERFORMANCE CURVES

APT35GN120B_S(G)

APT35GN120B

APT35GN120S

APT35GN120BG APT35GN120SG

1200V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s

have a very short, low amplitude tail current and low Eoff. The Trench Gate design

(B)

D³PAK

results in superior V

performance. Easy paralleling results from very tight

CE(on)

parameter distribution and slightly positive V

gate resistance ensures ultra-reliable operation. Low gate charge simpliﬁes gate drive

design and minimizes losses.

temperature coefﬁcient. Built-in

CE(on)

(S)

• 1200V NPT Field Stop

• Trench Gate: Low V_CE(on)

• Easy Paralleling

• 10µs Short Circuit Capability

• Intergrated Gate Resistor: Low EMI, High Reliability

Applications:Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

UNIT

APT35GN120B_S(G)

V_CES

Collector-Emitter Voltage

1200

Volts

V_GE

I_C1

Gate-Emitter Voltage

Continuous Collector Current @ T_C= 25°C

I_C2

Continuous Collector Current @ T_C= 110°C

Amps

Pulsed Collector Current

@ T_C= 150°C

I_CM

105

Switching Safe Operating Area @ T_J= 150°C

105A @ 1200V

379

SSOA

P_D

Total Power Dissipation

Watts

°C

T_J,T_STG

Operating and Storage Junction Temperature Range

-55 to 150

300

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

TYP

MAX

Units

V_(BR)CES

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 250µA)

V_GE(TH)

5.8

1.7

1.9

6.5

2.1

Gate Threshold Voltage (V_CE= V_GE, I_C= 1mA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 35A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 35A, T_j= 125°C)

Volts

1.4

V_CE(ON)

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 25°C)

100

TBD

600

I_CES

µA

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= 20V)

Intergrated Gate Resistor

I_GES

R_GINT

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6

中文翻译

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与APT35GN120SG相关器件

型号	品牌	获取价格	描述	数据表
APT35GP120B	ADPOW	获取价格	POWER MOS 7 IGBT
APT35GP120B2D2	ETC	获取价格	Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps\|Ultrafast IGBT Family
APT35GP120B2DF2	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel
APT35GP120B2DF2	ADPOW	获取价格	Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
APT35GP120B2DQ2	ADPOW	获取价格	POWER MOS 7 IGBT
APT35GP120B2DQ2G	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT35GP120B2DQ2G	ADPOW	获取价格	POWER MOS 7 IGBT
APT35GP120BG	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT35GP120J	ADPOW	获取价格	POWER MOS 7 IGBT
APT35GP120JD2	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES

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