Datasheet > APT35GP120B2D2

APT35GP120B2D2

更新时间： 2024-10-27 23:31:03

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
9页	114K
描述
Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps\|Ultrafast IGBT Family

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APT35GP120B2D2 数据手册

APT35GP120B2D2

1200V

POWER MOS 7 IGBT

T-Max^TM

The POWER MOS 7^®IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

highvoltageswitchingapplicationsandhasbeenoptimizedforhighfrequency

switchmode power supplies.

• Low Conduction Loss

• Low Gate Charge

• 100 kHz operation @ 800V, 12A

• 50 kHz operation @ 800V, 20A

• RBSOA rated

• Ultrafast Tail Current shutoff

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

Parameter

UNIT

Symbol

V_CES

V_GE

APT35GP120B2D2

Collector-Emitter Voltage

Gate-Emitter Voltage

1200

±20

±30

Volts

V_GEM

I_C1

Gate-Emitter Voltage Transient

Continuous Collector Current @ T_C= 25°C

Amps

I_C2

Continuous Collector Current @ T_C= 110°C

I_CM

140

Pulsed Collector Current

@ T_C= 25°C

RBSOA Reverse Bias Safe Operating Area @ T_J= 150°C

140A @ 960V

540

Watts

°C

P_D

Total Power Dissipation

T_J,T_STG

-55 to 150

Operating and Storage Junction Temperature Range

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

TYP

MAX

UNIT

BV_CES

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 500µA)

V_GE(TH)Gate Threshold Voltage (V_CE= V_GE, I_C= 1mA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 35A, T_j= 25°C)

4.5

2.9

2.8

Volts

3.9

V_CE(ON)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 35A, T_j= 125°C)

Collector Cut-off Current (V_CE= V_CES, V_GE= 0V, T_j= 25°C)

500

3000

±100

µA

I_CES

Collector Cut-off Current (V_CE= V_CES, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= ±20V)

I_GES

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5 6 7...9

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APT35GP120B2DF2	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel
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APT35GP120BG	MICROSEMI	获取价格	Power Semiconductors Power Modules
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