Datasheet > AOTF9606

AOTF9606

更新时间： 2024-09-26 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	183K
描述
600V, 8A N-Channel MOSFET

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AOTF9606 数据手册

AOT8N60 / AOTF8N60

600V, 8A N-Channel MOSFET

formerly engineering part number AOT9606/AOTF9606

General Description

Features

The AOT8N60 & AOTF8N60 have been fabricated

using an advanced high voltage MOSFET process

that is designed to deliver high levels of performance

and robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power

supply designs.

V_DS(V) = 700V @ 150°C

I_D= 8A

_DS(ON)< 0.9 Ω (V_GS= 10V)

100% UIS Tested!

100% R _gTested!

_iss, C _oss, C _rssTested!

Top View

TO-220F

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT8N60

AOTF8N60

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B

Pulsed Drain Current ^C

Avalanche Current ^C

600

±30

V_GS

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

3.2

150

300

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

147

P_D

Power Dissipation ^B

Derate above 25^oC

1.17

0.4

T_J, T_STG

Junction and Storage Temperature Range

-50 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

°C

Parameter

Symbol

R_θJA

AOT8N60

AOTF8N60

Units

Maximum Junction-to-Ambient ^A

Maximum Case-to-Sink ^A

°C/W

0.5

R_θCS

°C/W

Maximum Junction-to-Case ^D,F

R_θJC

0.85

2.5

* Drain current limited by maximum junction temperature.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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