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AOU400L PDF预览

AOU400L

更新时间: 2024-11-18 08:31:07
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 68K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOU400L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

AOU400L 数据手册

 浏览型号AOU400L的Datasheet PDF文件第2页浏览型号AOU400L的Datasheet PDF文件第3页浏览型号AOU400L的Datasheet PDF文件第4页浏览型号AOU400L的Datasheet PDF文件第5页 
AOU400  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOU400 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AOU400 is Pb-free  
(meets ROHS & Sony 259 specifications). AOU400L  
is a Green Product ordering option. AOU400 and  
AOU400L are electrically identical.  
VDS (V) = 60V  
ID = 38A (VGS = 10V)  
R
DS(ON) < 20m(VGS = 10V)  
DS(ON) < 25m(VGS = 4.5V)  
R
TO-251  
D
Top View  
Drain Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
60  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current B  
±20  
38  
V
A
TC=25°C G  
TC=100°C B  
ID  
27  
IDM  
IAR  
EAR  
Pulsed Drain Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
60  
30  
A
140  
60  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
30  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
Symbol  
RθJA  
Typ  
Max  
Units  
Steady-State  
Steady-State  
51  
60  
°C/W  
°C/W  
RθJC  
1.4  
2.5  
Alpha & Omega Semiconductor, Ltd.  

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