Datasheet > AOTF9N70

AOTF9N70

更新时间： 2024-09-26 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	534K
描述
700V, 9A N-Channel MOSFET

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AOTF9N70 数据手册

AOT9N70/AOTF9N70

700V, 9A N-Channel MOSFET

General Description

Product Summary

V_DS

800V@150℃

The AOT9N70 & AOTF9N70 have been fabricated using

an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

< 1.2Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT9N70L & AOTF9N70L

Top View

TO-220F

TO-220

AOTF9N70

AOT9N70

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT9N70

AOTF9N70

AOTF9N70L

Units

Drain-Source Voltage

V_DS

700

Gate-Source Voltage

V_GS

±30

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

5.8

5.8*

I_DM

Avalanche Current ^C

Repetitive avalanche energy ^C

I_AR

3.2

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

154

V/ns

W/ ^oC

236

1.8

27.8

0.22

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

°C

300

°C

Parameter

Symbol

R_θJA

AOT9N70

AOTF9N70

AOTF9N70L

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

0.5

°C/W

Maximum Junction-to-Case

R_θJC

0.53

2.5

4.5

* Drain current limited by maximum junction temperature.

ev 2: Feb 2012

www.aosmd.com

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