Datasheet > AOU1N60

AOU1N60

更新时间： 2024-09-26 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	502K
描述
600V,1.3A N-Channel MOSFET

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AOU1N60 数据手册

AOD1N60/AOU1N60/AOI1N60

600V,1.3A N-Channel MOSFET

General Description

TheꢀAOD1N60ꢀ&ꢀAOU1N60ꢀ&ꢀAOI1N60ꢀhaveꢀbeen

fabricatedꢀusingꢀanꢀadvancedꢀhighꢀvoltageꢀMOSFET

performanceꢀandꢀrobustnessꢀinꢀpopularꢀACꢁDC

processꢀthatꢀisꢀdesignedꢀtoꢀdeliverꢀhighꢀlevelsꢀof

applications.

guaranteedꢀavalancheꢀcapabilityꢀtheseꢀpartsꢀcanꢀbe

ByꢀprovidingꢀlowꢀR_DS(on),ꢀC_issꢀandꢀC_rssꢀalongꢀwith

adoptedꢀquicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply

designs.

Features

ꢀꢀꢀV_DS

700V@150℃

1.3A

ꢀꢀꢀI_Dꢀꢀ(atꢀV_GS=10V)

ꢀꢀꢀR_DS(ON)ꢀ(atꢀV_GS=10V)

<ꢀ9Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

DrainꢁSourceꢀVoltage

GateꢁSourceꢀVoltage

V_GS

±30

T_C=25°C

1.3

ContinuousꢀDrain

Current^B

I_D

T_C=100°C

0.8

PulsedꢀDrainꢀCurrentꢀ^C

I_DM

AvalancheꢀCurrentꢀ^C

I_AR

Repetitiveꢀavalancheꢀenergyꢀ^C

E_AR

E_AS

dv/dt

Singleꢀpulsedꢀavalancheꢀenergy^ꢀH

Peakꢀdiodeꢀrecoveryꢀdv/dt

T_C=25°C

V/ns

W/ꢀ^oC

P_D

PowerꢀDissipationꢀ^B

Derateꢀaboveꢀ25^oC

0.36

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ50ꢀtoꢀ150

°C

Maximumꢀleadꢀtemperatureꢀforꢀsoldering

purpose,ꢀ1/8"ꢀfromꢀcaseꢀforꢀ5ꢀseconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A,G

ꢁ

0.5

2.8

MaximumꢀCaseꢁtoꢁsinkꢀ^A

MaximumꢀJunctionꢁtoꢁCase^D,F

R_θCS

R_θJC

2.3

1/6

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