Datasheet > AOTF9N90

AOTF9N90

更新时间： 2024-11-21 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	301K
描述
900V, 9A N-Channel MOSFET

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AOTF9N90 数据手册

AOTF9N90

900V, 9A N-Channel MOSFET

General Description

Product Summary

V_DS

1000V@150℃

The AOTF9N90 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-

DC applications.By providing low R_DS(on), C_issand C_rss

along with guaranteed avalanche capability this part can

be adopted quickly into new and existing offline power

supply designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 1.3Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOTF9N90L

Top View

TO-220F

AOTF9N90

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOTF9N90

Units

Drain-Source Voltage

Gate-Source Voltage

900

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

3.6

194

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

388

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOTF9N90

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case

R_θJC

2.5

* Drain current limited by maximum junction temperature.

Rev0: Oct 2012

www.aosmd.com

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