Datasheet > AOU413L

AOU413L

更新时间： 2024-09-26 08:31:07

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	71K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOU413L 数据手册

AOU413

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU413 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications. Standard Product

AOU413 is Pb-free (meets ROHS & Sony 259

specifications). AOU413L is a Green Product

ordering option. AOU413 and AOU413L are

electrically identical.

V_DS(V) = -40V

I_D= -12A (V_GS= -10V)

R_DS(ON)< 45mΩ (V_GS= -10V)

R_DS(ON)< 69mΩ (V_GS= -4.5V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-12

T_A=25°C ^G

T_A=100°C ^G

I_D

-12

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

-30

-12

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Symbol

R_θJA

Typ

Max

Units

Steady-State

°C/W

R_θJL

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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