Datasheet > AOTL66912

AOTL66912

更新时间： 2024-09-26 19:58:11

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	324K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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AOTL66912 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

AOTL66912 数据手册

AOTL66912

100V N-Channel AlphaSGT ^TM

General Description

Product Summary

• Trench Power MOSFET - AlphaSGT^TMtechnology

• Combination of low R_DS(ON)and wide safe operating

area (SOA)

• Higher in-rush current enabled for faster start-up and

shorter down time

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

380A

< 1.7mΩ

< 2.5mΩ

• RoHS and Halogen-Free Compliant

Applications

100% UIS Tested

100% Rg Tested

• Telecom hotswap

• Load switch

• Solar

• Battery management

TOLLA

Bottom View

Top View

PIN1

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOTL66912

TOLLA

2000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

380

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C(≤100μS)

269

I_DM

1520

T_A=25°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

T_A=70°C

I_AS

Avalanche energy

L=0.1mH ^C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

E_AS

405

500

P_D

Power Dissipation ^B

Power Dissipation ^A

250

8.3

P_DSM

5.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_qJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_qJC

0.2

0.3

Rev.1.0: June 2019

www.aosmd.com

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