AOU3N60

更新时间： 2024-11-21 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	282K
描述
600V,2.5A N-Channel MOSFET

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中文翻译

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技术参数
数据手册

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AOU3N60 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	1.71	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	2.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	56.8 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

AOU3N60 数据手册

AOD3N60/AOU3N60

600V,2.5A N-Channel MOSFET

General Description

Product Summary

The AOD3N60 & AOU3N60 have been fabricated using

an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

V_DS

700V@150℃

2.5A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 3.5Ω

100% UIS Tested!

100% R_gTested!

TO252

DPAK

TO251

Top View

Bottom View

AOD3N60

AOU3N60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_C=25°C

2.5

Continuous Drain

Current^B

I_D

T_C=100°C

1.6

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy^H

Peak diode recovery dv/dt

T_C=25°C

120

V/ns

W/ ^oC

56.8

0.45

-50 to 150

P_D

Power Dissipation ^B

Derate above 25^oC

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_J, T_STG

T_L

°C

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

2.2

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

1.8

Rev 6: Jul 2011

www.aosmd.com

Page 1 of 6

12 3 4 5 6

中文翻译

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