AOU405

更新时间： 2024-09-26 03:19:07

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	108K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOU405 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82

AOU405 数据手册

AOU405

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU405 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the TO-251 package, this device is well suited for

high current load applications. Standard Product

AOU405 is Pb-free (meets ROHS & Sony 259

specifications). AOU405L is a Green Product

ordering option. AOU405 and AOU405L are

electrically identical.

V_DS(V) = -30V

I_D= -18A (V_GS= -10V)

R_DS(ON)< 34mΩ (V_GS= -10V)

R_DS(ON)< 60mΩ (V_GS= -4.5V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-18

T_A=25°C ^G

T_A=100°C ^G

I_D

-18

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

-40

-18

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJC

1.8

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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