Datasheet > AOTL66608

AOTL66608

更新时间： 2024-11-21 20:52:43

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	356K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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AOTL66608 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

AOTL66608 数据手册

AOTL66608

60V N-Channel AlphaSGT ^TM

General Description

Product Summary

• Trench Power AlphaSGT^TMtechnology

• Low R_DS(ON)

V_DS

60V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

400A

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

< 0.85mΩ

< 1.1mΩ

Applications

100% UIS Tested

100% Rg Tested

• Battery Protection

• Power Distribution

TOLLA

Top View

Bottom View

PIN1(G)

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOTL66608

TOLLA

2000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

400

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

400

I_DM

1000

73.5

58.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AS

Avalanche energy

L=0.3mH

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

E_AS

1354

500

P_D

Power Dissipation ^B

Power Dissipation ^A

250

8.3

P_DSM

5.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_qJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_qJC

0.2

0.3

Rev.1.0: February 2019

www.aosmd.com

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