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AOTL66610 PDF预览

AOTL66610

更新时间: 2024-11-18 21:11:55
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 384K
描述
Power Field-Effect Transistor,

AOTL66610 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.75峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AOTL66610 数据手册

 浏览型号AOTL66610的Datasheet PDF文件第2页浏览型号AOTL66610的Datasheet PDF文件第3页浏览型号AOTL66610的Datasheet PDF文件第4页浏览型号AOTL66610的Datasheet PDF文件第5页浏览型号AOTL66610的Datasheet PDF文件第6页 
AOTL66610  
60V N-Channel AlphaSGT TM  
General Description  
Product Summary  
• Trench Power AlphaSGTTM technology  
• Low RDS(ON)  
VDS  
60V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=6V)  
350A  
• Low Gate Charge  
• High Current Capability  
• RoHS and Halogen-Free Compliant  
< 1.2mΩ  
< 1.9mΩ  
Applications  
100% UIS Tested  
100% Rg Tested  
• Motor Driver  
• Battery Protection  
• Power Distribution  
TOLLA  
Bottom View  
Top View  
D
D
PIN1  
S
G
G
S
PIN1  
Orderable Part Number  
Package Type  
Form  
Tape & Reel  
Minimum Order Quantity  
AOTL66610  
TOLLA  
2000  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TC=25°C  
350  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
TC=100°C  
A
247  
IDM  
960  
TA=25°C  
TA=70°C  
61  
Continuous Drain  
Current  
IDSM  
A
49  
Avalanche Current C  
IAS  
75  
A
C
Avalanche energy  
L=0.3mH  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
EAS  
844  
mJ  
272  
PD  
W
Power Dissipation B  
Power Dissipation A  
136  
8.3  
PDSM  
W
5.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
15  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t ≤ 10s  
10  
35  
RqJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
45  
RqJC  
0.35  
0.55  
Rev.1.0: February 2019  
www.aosmd.com  
Page 1 of 6  

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