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AOU403 PDF预览

AOU403

更新时间: 2024-09-26 08:31:07
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
5页 70K
描述
P-Channel Enhancement Mode Field Effect Transistor

AOU403 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Is Samacsys:NBase Number Matches:1

AOU403 数据手册

 浏览型号AOU403的Datasheet PDF文件第2页浏览型号AOU403的Datasheet PDF文件第3页浏览型号AOU403的Datasheet PDF文件第4页浏览型号AOU403的Datasheet PDF文件第5页 
AOU403  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOU403 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load  
switching and general purpose applications. Standard  
Product AOU403 is Pb-free (meets ROHS & Sony  
259 specifications). AOU403L is a Green Product  
ordering option. AOU403 and AOU403L are  
electrically identical.  
VDS (V) = -60V  
ID = -12A (VGS = -10V)  
RDS(ON) < 115m(VGS = -10V)  
RDS(ON) < 150m(VGS = -4.5V)  
TO-251  
D
Top View  
Drain Connected  
to Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-60  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
-12  
V
A
TC=25°C  
TC=100°C  
ID  
-10  
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
EAR  
-30  
-12  
A
23  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
50  
PD  
W
25  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
Symbol  
RθJA  
Typ  
Max  
Units  
Steady-State  
Steady-State  
105  
2.5  
125  
3
°C/W  
°C/W  
RθJC  
Alpha & Omega Semiconductor, Ltd.  

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