Datasheet > AOU412L

AOU412L

更新时间： 2024-09-26 08:31:07

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	69K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOU412L 数据手册

AOU412

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU412 uses advanced trench technology to

provide excellent R_DS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

Standard Product AOU412 is Pb-free (meets ROHS

& Sony 259 specifications). AOU412L is a Green

Product ordering option. AOU412 and AOU412L are

electrically identical.

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

_DS(ON)< 7.5mΩ (V_GS= 10V)

_DS(ON)< 11mΩ (V_GS= 4.5V)

TO-251

Top View

Drain

Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

200

120

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

R_θJA

Typ

Max

Units

Steady-State

105

125

1.5

°C/W

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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