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AOU3N60 PDF预览

AOU3N60

更新时间: 2024-09-26 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 560K
描述
600V,2.5A N-Channel MOSFET

AOU3N60 数据手册

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AOD3N60/AOU3N60  
600V,2.5A N-Channel MOSFET  
General Description  
The AOD3N60 & AOU3N60 have been fabricated using  
an advanced high voltage MOSFET process that is  
robustness in popular AC-DC applications.  
designed to deliver high levels of performance and  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
Features  
VDS  
700V@150  
2.5A  
ID (at VGS=10V)  
R
DS(ON) (at VGS=10V)  
< 3.5  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
600  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±30  
TC=25°C  
2.5  
Continuous Drain  
CurrentB  
ID  
TC=100°C  
1.6  
A
Pulsed Drain Current C  
IDM  
8
2
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
60  
mJ  
Single pulsed avalanche energyH  
Peak diode recovery dv/dt  
TC=25°C  
120  
mJ  
V/ns  
W
W/ oC  
5
56.8  
0.45  
-50 to 150  
PD  
Power Dissipation B  
Derate above 25oC  
Junction and Storage Temperature Range  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
TJ, TSTG  
TL  
°C  
300  
°C  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Typical  
Maximum  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
45  
-
55  
0.5  
2.2  
Maximum Case-to-sink A  
Maximum Junction-to-CaseD,F  
RθCS  
RθJC  
1.8  
1/6  
www.freescale.net.cn  

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