Datasheet > AOU3N60

AOU3N60

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	560K
描述
600V,2.5A N-Channel MOSFET

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AOU3N60 数据手册

AOD3N60/AOU3N60

600V,2.5A N-Channel MOSFET

General Description

The AOD3N60 & AOU3N60 have been fabricated using

an advanced high voltage MOSFET process that is

robustness in popular AC-DC applications.

designed to deliver high levels of performance and

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

Features

V_DS

700V@150℃

2.5A

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

< 3.5Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_C=25°C

2.5

Continuous Drain

Current^B

I_D

T_C=100°C

1.6

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy^H

Peak diode recovery dv/dt

T_C=25°C

120

V/ns

W/ ^oC

56.8

0.45

-50 to 150

P_D

Power Dissipation ^B

Derate above 25^oC

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_J, T_STG

T_L

°C

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

2.2

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

1.8

1/6

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