Datasheet > AOU1N60

AOU1N60

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	152K
描述
1.3A, 600V N-Channel MOSFET

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AOU1N60 数据手册

AOD1N60 / AOU1N60

1.3A, 600V N-Channel MOSFET

formerly engineering part number AOD9600

General Description

Features

The AOD1N60 has been fabricated using an

advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power

supply designs.

V_DS(V) = 600V

I_D= 1.3A

R_DS(ON)< 9Ω (V_GS= 10V)

100% UIS Tested!

100% R _gTested!

C _iss, C _oss, C _rssTested!

TO-252

D-PAK

TO-251

Top View Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximium

600

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±30

T_C=25°C

1.3

T_C=100°C

I_D

0.8

I_DM

I_AR

4.0

1.0

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

V/ns

P_D

Power Dissipation ^B

Derate above 25^oC

0.36

W/ C

T_J, T_STG

Junction and Storage Temperature Range

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

Parameter

Symbol

R_θJA

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A,G

Maximum Case-to-Sink ^A

°C/W

0.5

2.8

R_θCS

°C/W

Maximum Junction-to-Case ^D,F

R_θJC

2.3

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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