AOU417L

更新时间： 2024-09-26 08:31:07

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	162K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AOU417L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

AOU417L 数据手册

AOU417

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU417 uses advanced trench technology to

provide excellent RDS(ON), and low gate charge.

This device is suitable for use as a load switch or in

PWM applications. Standard product AOU417 is Pb-

free (meets ROHS & Sony 259 specifications).

AOU417L is a Green Product ordering option.

AOU417 and AOU417L are electrically identical .

V_DS(V) = -30V

I_D= -18A (V_GS= -10V)

R_DS(ON)< 22mΩ (V_GS= -10V)

R_DS(ON)< 40mΩ (V_GS= -4.5V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-18

T_A=25°C ^G

T_A=100°C ^G

I_D

-18

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

-40

-18

16.2

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Symbol

R_θJA

Typ

Max

Units

Steady-State

105

2.5

125

°C/W

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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