AOU408

更新时间： 2024-09-26 08:31:07

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	68K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOU408 数据手册

AOU408

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU408 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications. Standard Product AOU408 is Pb-

free (meets ROHS & Sony 259 specifications).

AOU408L is a Green Product ordering option.

AOU408 and AOU408L are electrically identical.

V_DS(V) = 105V

I_D= 40 A (V_GS=10V)

R_DS(ON)< 28 mΩ (V_GS=10V) @ 20A

R_DS(ON)< 31 mΩ (V_GS= 6V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

105

V_GS

Gate-Source Voltage

±25

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

100

200

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

Steady-State

R_θJA

°C/W

Maximum Junction-to-Case ^B

R_θJC

1.5

°C/W

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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