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AOTF9N50 PDF预览

AOTF9N50

更新时间: 2024-09-26 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 164K
描述
500V, 9A N-Channel MOSFET

AOTF9N50 数据手册

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AOT9N50/AOTF9N50  
500V, 9A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
600V@150  
9A  
The AOT9N50 & AOTF9N50 have been fabricated using  
an advanced high voltage MOSFET process that is  
designed to deliver high levels of performance and  
robustness in popular AC-DC applications.  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
ID (at VGS=10V)  
R
DS(ON) (at VGS=10V)  
< 0.85  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT9N50L & AOTF9N50L  
Top View  
TO-220F  
TO-220  
D
G
G
G
D
D
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
AOT9N50  
AOTF9N50  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
500  
±30  
V
V
VGS  
TC=25°C  
9
9*  
6*  
Continuous Drain  
Current  
ID  
TC=100°C  
6.0  
A
Pulsed Drain Current C  
IDM  
30  
3.2  
154  
307  
5
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
mJ  
Single plused avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
mJ  
V/ns  
W
W/ oC  
192  
1.5  
38.5  
0.3  
PD  
Power Dissipation B  
Derate above 25oC  
Junction and Storage Temperature Range  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TJ, TSTG  
TL  
-55 to 150  
300  
°C  
°C  
Parameter  
Symbol  
RθJA  
AOT9N50  
65  
AOTF9N50  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,D  
65  
--  
Maximum Case-to-sink A  
RθCS  
0.5  
Maximum Junction-to-Case  
RθJC  
0.65  
3.25  
* Drain current limited by maximum junction temperature.  
Rev3: July 2010  
www.aosmd.com  
Page 1 of 6  

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