Datasheet > AOTF9608

AOTF9608

更新时间： 2024-09-26 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	183K
描述
600V, 10A N-Channel MOSFET

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AOTF9608 数据手册

AOT10N60 / AOTF10N60

600V, 10A N-Channel MOSFET

formerly engineering part number AOT9608/AOTF9608

General Description

Features

The AOT10N60 & AOTF10N60 have been fabricated

using an advanced high voltage MOSFET process

that is designed to deliver high levels of performance

and robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power

supply designs.

V_DS(V) = 700V @ 150°C

I_D= 10A

R_DS(ON)< 0.75 Ω (V_GS= 10V)

100% UIS Tested!

100% R _gTested!

C _iss, C _oss, C _rssTested!

Top View

TO-220F

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT10N60

600

AOTF10N60

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±30

T_C=25°C

10*

T_C=100°C

I_D

6.4

6.4*

I_DM

I_AR

4.4

290

580

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

208

1.7

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

W/ C

T_J, T_STG

Junction and Storage Temperature Range

-50 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

Parameter

Symbol

R_θJA

AOT10N60

AOTF10N60

Units

Maximum Junction-to-Ambient ^A

Maximum Case-to-Sink ^A

°C/W

R_θCS

0.5

0.6

°C/W

Maximum Junction-to-Case ^D,F

R_θJC

2.5

* Drain current limited by maximum junction temperature.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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