Datasheet > AOB2608L

AOB2608L

更新时间： 2024-09-15 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	409K
描述
60V N-Channel MOSFET

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AOB2608L 数据手册

AOT2608L/AOB2608L

60V N-Channel MOSFET

General Description

The AOT2608L/AOB2608L uses Trench MOSFET

technology that is uniquely optimized to provide the most

conduction and switching power losses are minimized

efficient high frequency switching performance. Both

due to an extremely low combination of R_DS(ON), Ciss and

Coss.This device is ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Features

V_DS

60V

I_D(at V_GS=10V)

72A

R_DS(ON)(at V_GS=10V)

< 8.0mΩ (< 7.6mΩ )

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

180

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

8.5

I_AS

E_AS

125

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.2

1.5

1/6

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