Datasheet > AOB288L

AOB288L

更新时间： 2024-11-20 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	363K
描述
80V N-Channel MOSFET

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AOB288L 数据手册

AOT288L/AOB288L/AOTF288L

80V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT288L & AOB288L & AOTF288L uses trench

MOSFET technology that is uniquely optimized to provide

the most efficient high frequency switching performance.

Both conduction and switching power losses are

80V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

46A / 43A

< 9.2mΩ(< 8.9mΩ*)

<12.5mΩ(< 12.2mΩ*)

minimized due to an extremely low combination of R_DS(ON)

Ciss and Coss.This device is ideal for boost converters

and synchronous rectifiers for consumer, telecom,

industrial power supplies and LED backlighting.

100% UIS Tested

100% R_gTested

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT288L

AOTF288L

AOB288L

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT288L/AOB288L

AOTF288L

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

160

10.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

93.5

46.5

35.5

17.5

P_D

T_A=25°C

2.1

1.3

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

AOT288L/AOB288L

AOTF288L

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.6

4.2

* Surface mount package TO263

Rev 0 : Dec. 2012

www.aosmd.com

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