Datasheet > AOB2618L

AOB2618L

更新时间： 2024-09-15 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	373K
描述
60V N-Channel MOSFET

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AOB2618L 数据手册

AOT2618L/AOB2618L/AOTF2618L

60V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT2618L & AOB2618L & AOTF2618L uses trench

MOSFET technology that is uniquely optimized to provide

the most efficient high frequency switching performance.

Both conduction and switching power losses are

60V

23A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

< 19mΩ

< 25mΩ

minimized due to an extremely low combination of R_DS(ON)

Ciss and Coss. This device

is ideal for boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

100% UIS Tested

100% R_gTested

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT2618L

AOTF2618L

AOB2618L

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT2618L/AOB2618L

AOTF2618L

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

5.5

I_AS

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

41.5

20.5

23.5

11.5

P_D

T_A=25°C

2.1

1.3

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

AOT2618L/AOB2618L

AOTF2618L

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

3.6

6.4

Rev 0 : July 2012

www.aosmd.com

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