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AOB260L PDF预览

AOB260L

更新时间: 2024-11-20 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 297K
描述
60V N-Channel MOSFET

AOB260L 数据手册

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AOT260L/AOB260L  
60V N-Channel MOSFET  
General Description  
Product Summary  
The AOT(B)260L uses Trench MOSFET technology that  
is uniquely optimized to provide the most efficient high  
frequency switching performance. Power losses are  
minimized due to an extremely low combination of  
RDS(ON) and Crss.In addition, switching behavior is well  
controlled with a “Schottky style” soft recovery body  
diode.This device is ideal for boost converters and  
synchronous rectifiers for consumer, telecom, industrial  
power supplies and LED backlighting.  
VDS  
60V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS =6V)  
140A  
< 2.5m  
< 2.9mΩ  
100% UIS Tested  
100% Rg Tested  
TO-263  
D2PAK  
TO220  
Top View  
Bottom View  
Top View  
Bottom View  
D
D
D
D
D
G
S
G
S
D
D
G
G
S
S
G
S
AOT260L  
AOB260L  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TC=25°C  
140  
Continuous Drain  
Current G  
ID  
TC=100°C  
110  
A
A
Pulsed Drain Current C  
IDM  
500  
20  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
16  
IAS, IAR  
128  
A
EAS, EAR  
819  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
330  
PD  
W
165  
TA=25°C  
1.9  
PDSM  
W
°C  
Power Dissipation A  
1.2  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
12  
Max  
15  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
54  
65  
RθJC  
0.35  
0.45  
Rev 1 : Jul 2011  
www.aosmd.com  
Page 1 of 6  

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