AOT260L/AOB260L
60V N-Channel MOSFET
General Description
Product Summary
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =6V)
140A
< 2.5mΩ
< 2.9mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
D
D
G
G
S
S
G
S
AOT260L
AOB260L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TC=25°C
140
Continuous Drain
Current G
ID
TC=100°C
110
A
A
Pulsed Drain Current C
IDM
500
20
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
16
IAS, IAR
128
A
EAS, EAR
819
mJ
TC=25°C
Power Dissipation B
TC=100°C
330
PD
W
165
TA=25°C
1.9
PDSM
W
°C
Power Dissipation A
1.2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
54
65
RθJC
0.35
0.45
Rev 1 : Jul 2011
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