Datasheet > AOB270AL

AOB270AL

更新时间： 2024-09-15 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	329K
描述
75V N-Channel MOSFET

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AOB270AL 数据手册

AOT270AL/AOB270AL

75V N-Channel MOSFET

General Description

Product Summary

V_DS

75V

The AOT270AL/AOB270AL uses Trench MOSFET

technology that is uniquely optimized to provide the most

efficient high frequency switching performance. Both

conduction and switching power losses are minimized due

to an extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

140A

< 2.6mΩ (< 2.4mΩ )

< 3.2mΩ (< 3.0mΩ )

100% UIS Tested

100% R_gTested

TO-263

TO220

Top View

Bottom

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

140

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

110

Pulsed Drain Current ^C

I_DM

560

T_A=25°C

T_A=70°C

21.5

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

120

Avalanche energy L=0.1mH ^C

E_AS

720

T_C=25°C

Power Dissipation ^B

T_C=100°C

500

P_D

250

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.25

0.3

* Surface mount package TO263

Rev 0 : Dec. 2012

www.aosmd.com

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