Datasheet > AOB403

AOB403

更新时间： 2024-11-09 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	178K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOB403 数据手册

AOB403

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB403 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the D2-PAK package, this device is well suited for

high current load applications. Standard product

AOB403 is Pb-free (meets ROHS & Sony 259

specifications). AOB403L is a Green Product ordering

option. AOB403 and AOB403L are electrically

identical.

V_DS(V) = -60V

I_D= -30A (VGS=-10V)

R_DS(ON)< 44mΩ (V_GS= -10V ) @ 30A

R_DS(ON)< 55mΩ (V_GS= -4.5V ) @ 20A

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-60

V_GS

Gate-Source Voltage

±20

-30

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

-20

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

-60

-26

134

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.2

P_DSM

Power Dissipation ^A

T_A=70°C

1.45

-55 to 175

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJC

1.35

1.8

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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