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AOB29S50 PDF预览

AOB29S50

更新时间: 2024-09-15 12:51:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
7页 330K
描述
500V 29A a MOS Power Transistor

AOB29S50 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.83
Base Number Matches:1

AOB29S50 数据手册

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AOT29S50/AOB29S50/AOTF29S50  
500V 29A  
α
MOS TM Power Transistor  
General Description  
Product Summary  
VDS @ Tj,max  
IDM  
RDS(ON),max  
Qg,typ  
600V  
The AOT29S50 & AOB29S50 & AOTF29S50 have been  
fabricated using the advanced αMOSTM high voltage  
process that is designed to deliver high levels of  
performance and robustness in switching applications.  
By providing low RDS(on), Qg and EOSS along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
120A  
0.15Ω  
26.6nC  
6.3µJ  
Eoss @ 400V  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT29S50L & AOB29S50L & AOTF29S50L  
Top View  
TO-263  
D2PAK  
TO-220  
TO-220F  
D
D
G
S
S
S
D
D
G
G
S
G
AOT29S50  
AOTF29S50  
AOB29S50  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT29S50/AOB29S50 AOTF29S50  
AOTF29S50L  
Units  
Drain-Source Voltage  
VDS  
500  
V
Gate-Source Voltage  
VGS  
±30  
V
A
TC=25°C  
29  
18  
29*  
18*  
29*  
18*  
Continuous Drain  
Current  
ID  
TC=100°C  
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAR  
120  
7.5  
A
mJ  
Repetitive avalanche energy C  
Single pulsed avalanche energy G  
TC=25°C  
EAR  
EAS  
110  
608  
mJ  
357  
2.9  
50  
37.9  
0.3  
W
W/ oC  
PD  
Power Dissipation B  
Derate above 25oC  
0.4  
100  
20  
MOSFET dv/dt ruggedness  
dv/dt  
V/ns  
°C  
Peak diode recovery dv/dt H  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds J  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
AOT29S50/AOB29S50 AOTF29S50  
AOTF29S50L  
Units  
Maximum Junction-to-Ambient A,D  
RθJA  
65  
65  
65  
°C/W  
Maximum Case-to-sink A  
RθCS  
RθJC  
0.5  
--  
--  
°C/W  
°C/W  
Maximum Junction-to-Case  
0.35  
2.5  
3.3  
* Drain current limited by maximum junction temperature.  
Rev0: March 2012  
www.aosmd.com  
Page 1 of 7  

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