AOB29S50L

更新时间： 2024-11-20 12:59:23

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	330K
描述
Transistor

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中文翻译

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技术参数
数据手册

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AOB29S50L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.39
Base Number Matches：	1

AOB29S50L 数据手册

AOT29S50/AOB29S50/AOTF29S50

500V 29A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

R_DS(ON),max

Q_g,typ

600V

The AOT29S50 & AOB29S50 & AOTF29S50 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

120A

0.15Ω

26.6nC

6.3µJ

E_oss@ 400V

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT29S50L & AOB29S50L & AOTF29S50L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT29S50

AOTF29S50

AOB29S50

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT29S50/AOB29S50 AOTF29S50

AOTF29S50L

Units

Drain-Source Voltage

V_DS

500

Gate-Source Voltage

V_GS

±30

T_C=25°C

29*

18*

29*

18*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

120

7.5

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

110

608

357

2.9

37.9

0.3

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

100

MOSFET dv/dt ruggedness

dv/dt

V/ns

°C

Peak diode recovery dv/dt ^H

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT29S50/AOB29S50 AOTF29S50

AOTF29S50L

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

°C/W

Maximum Junction-to-Case

0.35

2.5

3.3

* Drain current limited by maximum junction temperature.

Rev0: March 2012

www.aosmd.com

Page 1 of 7

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