Datasheet > AOB405L

AOB405L

更新时间： 2024-11-20 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	119K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOB405L 数据手册

AOB405

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB405 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the D2PAK package, this device is well suited for

high current load applications. Standard Product

AOB405 is Pb-free (meets ROHS & Sony 259

specifications). AOB405L is a Green Product ordering

option. AOB405 and AOB405L are electrically

identical.

V_DS(V) = -40V

I_D= -12A (V_GS= -10V)

R_DS(ON)< 48mΩ (V_GS= -10V)

R_DS(ON)< 72mΩ (V_GS= -4.5V)

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-12

T_A=25°C ^G

T_A=100°C ^G

I_D

-12

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

-30

-12

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

Power Dissipation ^A

T_A=70°C

1.5

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJC

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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