Datasheet > AOB410L

AOB410L

更新时间： 2024-11-05 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	319K
描述
100V N-Channel MOSFET

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AOB410L 数据手册

AOT410L/AOB410L

100V N-Channel MOSFET

SDMOS ^TM

General Description

Product Summary

The AOT410L/AOB410L is fabricated with SDMOS^TM

trench technology that combines excellent R_DS(ON)with

low gate charge & low Q_rr.The result is outstanding

efficiency with controlled switching behavior. This

universal technology is well suited for PWM, load

switching and general purpose applications.

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

150A

< 6.5mΩ

< 7.5mΩ

R_DS(ON)(at V_GS= 7V)

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

AOB410L

AOT410L

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±25

150

108

405

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS,I_AR

E_AS,E_AR

125

333

167

1.9

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.2

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.35

0.45

Rev1: Jul 2011

www.aosmd.com

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