Datasheet > AOB409L

AOB409L

更新时间： 2024-09-15 12:24:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	250K
描述
60V P-Channel MOSFET

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AOB409L 数据手册

AOB409L

60V P-Channel MOSFET

General Description

Product Summary

V_DS

-60V

The AOB409L combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON).This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

-31.5A

< 38mΩ

< 50mΩ

100% UIS Tested

100% R_gTested

TO-263

D²PAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-60

Gate-Source Voltage

V_GS

±20

-31.5

-22

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

-85

T_A=25°C

T_A=70°C

-5

Continuous Drain

Current

I_DSM

-4

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

83.3

41.6

2.1

P_D

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

1.8

Rev 0: Sep. 2011

www.aosmd.com

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