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AOB2918L PDF预览

AOB2918L

更新时间: 2024-09-15 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 344K
描述
100V N-Channel MOSFET

AOB2918L 数据手册

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AOT2918L/AOB2918L/AOTF2918L  
100V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOT2918L & AOB2918L & AOTF2918L uses Trench  
MOSFET technology that is uniquely optimized to provide  
the most efficient high frequency switching performance.  
Power losses are minimized due to an extremely low  
100V  
90A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 7m  
combination of RDS(ON) and Crss  
.
In addition, switching behavior is well controlled with a  
soft recovery body diode.This device is ideal for boost  
converters and synchronous rectifiers for consumer,  
telecom, industrial power supplies and LED backlighting.  
100% UIS Tested  
100% Rg Tested  
Top View  
TO-263  
D2PAK  
D
TO-220  
TO-220F  
D
G
S
S
S
S
D
D
G
G
G
AOT2918L  
AOTF2918L  
AOB2918L  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT2918L/AOB2918L  
100  
AOTF2918L  
Units  
Drain-Source Voltage  
VDS  
V
Gate-Source Voltage  
VGS  
ID  
IDM  
IDSM  
±20  
V
A
TC=25°C  
90  
70  
58  
45  
Continuous Drain  
Current G  
Pulsed Drain Current C  
TC=100°C  
260  
13  
10  
35  
61  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
A
IAS, IAR  
A
EAS, EAR  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
267  
133  
41  
20  
PD  
W
TA=25°C  
2.1  
1.33  
PDSM  
W
°C  
Power Dissipation A  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
AOT2918L/AOB2918L  
AOTF2918L  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
15  
60  
15  
60  
RθJA  
Steady-State  
Steady-State  
RθJC  
0.56  
3.6  
Rev 2 : Feb 2011  
www.aosmd.com  
Page 1 of 7  

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