Datasheet > AOB282L

AOB282L

更新时间： 2024-09-15 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	276K
描述
80V N-Channel MOSFET

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AOB282L 数据手册

AOT282L/AOB282L

80V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT282L & AOB282L uses trench MOSFET

technology that is uniquely optimized to provide the most

efficient high frequency switching performance. Both

conduction and switching power losses are minimized due

to an extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

80V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

105A

< 3.5mΩ (< 3.2mΩ )

< 5.2mΩ (< 4.9mΩ )

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

105

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

420

18.5

14.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

E_AS

320

T_C=25°C

Power Dissipation ^B

T_C=100°C

272.5

136

P_D

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.35

0.55

* Surface mount package TO263

Rev 0 : August 2012

www.aosmd.com

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