AOB290L

更新时间： 2024-11-20 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	304K
描述
100V N-Channel MOSFET

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中文翻译

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技术参数
数据手册

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AOB290L 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	1.69	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	140 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	500 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

AOB290L 数据手册

AOT290L/AOB290L

100V N-Channel MOSFET

General Description

Product Summary

V_DS

100V

The AOT290L/AOB290L uses Trench MOSFET

technology that is uniquely optimized to provide the most

efficient high frequency switching performance. Power

losses are minimized due to an extremely low combination

of R_DS(ON)and C_rss.In addition, switching behavior is well

controlled with a soft recovery body diode.This device is

ideal for boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

140A

< 3.5mΩ (< 3.2mΩ )

100% UIS Tested

100% R_gTested

TO220

TO-263

D²PAK

Top View

Bottom

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C=25°C

140

Continuous Drain

Current ^G

I_D

T_C=100°C

110

Pulsed Drain Current ^C

I_DM

500

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

100

E_AS, E_AR

500

T_C=25°C

Power Dissipation ^B

T_C=100°C

500

P_D

250

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.25

0.3

* Surface mount package TO263

Rev3 : Sep 2011

www.aosmd.com

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