Datasheet > AO4916

AO4916

更新时间： 2024-10-30 12:51:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体二极管晶体管场效应晶体管
页数	文件大小	规格书
7页	458K
描述
N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode

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AO4916 数据手册

AO4916, AO4916L

N-Channel Enhancement Mode Field

with Schcttky Diode

Effect Transistor

General Description

DS(ON)

The AO4916 uses advanced trench technology to

provide excellent R

and low gate charge. The

and synchronous rectifier combination for use in DC-

parallel with the synchronous MOSFET to boost

two MOSFETs make a compact and efficient switch

DC converters. A Schottky diode is co-packaged in

( Green Product ) is offered in a lead-free package.

efficiency further. AO4916L

Features

V_DS(V) = 30V

I_D= 8.5A

R_DS(ON)< 17mΩ (V_GS= 10V)

_DS(ON)< 27mΩ (V_GS= 4.5V)

SCHOTTKY

V_DS(V) = 30V, I_F= 3A, V_F=0.5V@1A

D1/S2/K

S1/A

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

8.5

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current ^A

Pulsed Drain Current ^B

6.6

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current ^A

Pulsed Forward Current ^B

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

62.5

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

°C/W

110

R_θJL

Thermal Characteristics Schottky

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

t ≤ 10s

47.5

62.5

R_θJA

R_θJL

Steady-State

110

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